Advances in Monolithic Microwave Integrated Circuits for by Arjuna Marzuki, Ahmad Ismat Abdul Rahim, Mourad Loulou

By Arjuna Marzuki, Ahmad Ismat Abdul Rahim, Mourad Loulou

Monolithic Microwave built-in Circuit (MMIC) is an digital equipment that's ordinary in all excessive frequency instant platforms. In constructing MMIC as a product, knowing research and layout concepts, modeling, size method, and present developments are essential.

Advances in Monolithic Microwave built-in Circuits for instant structures: Modeling and layout Technologies is a significant resource of data on MMIC improvement, containing study on thought, layout, and useful methods to built-in circuit units. This publication is of curiosity to researchers in and academia operating within the parts of circuit layout, built-in circuits, and RF and microwave, in addition to somebody with an curiosity in monolithic instant equipment development.

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Additional info for Advances in Monolithic Microwave Integrated Circuits for Wireless Systems: Modeling and Design Technologies

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Abidi, A. A. (2000). 5-mW 900-MHz CMOS receiver for wireless paging. Solid-State Circuits. IEEE Journal of, 35(8), 1085–1096. Floyd, B. , Reynolds, S. , & Pfeiffer, U. R. (2005). WCDMA direct-conversion receiver front-end comparison in RF-CMOS and SiGe BiCMOS. Microwave Theory and Techniques. IEEE Transactions on, 53(4), 1181–1188. , & El-Hennawy, H. (2001). An RF CMOS cascode LNA with current reuse and inductive source degeneration. Paper presented at the Proceedings of the 44th IEEE 2001 Midwest Symposium on Circuits and Systems (MWSCAS 2001) Michigan State, USA.

For high frequency of operation, and if gate noise is to be considered, the noise performance will be much more degraded. As reported in (Lee, 2004), the NF can reach 11 dB for an 800MHz of operation. 25 LNA Inventions Figure 1. CS amplifier with shunt-input resistor (ac representation) Common Gate (CG) Amplifier The CG amplifier is shown in Figure 2. , 2004). Because of this, proper selection of the device size and bias current can provide the desired 50 Ω resistance. The noise factor of this circuit is given by F ≥ 1 + γ / α (Lee, 2004) for low frequency and not considering gate noise.

Microwave Theory and Techniques. IEEE Transactions on, 53(4), 1181–1188. , & El-Hennawy, H. (2001). An RF CMOS cascode LNA with current reuse and inductive source degeneration. Paper presented at the Proceedings of the 44th IEEE 2001 Midwest Symposium on Circuits and Systems (MWSCAS 2001) Michigan State, USA. , & Mayhugh, T. (2003). A direct-conversion receiver for the 3G WCDMA standard. Solid-State Circuits. IEEE Journal of, 38(3), 556–560. Goo, J. , Ahn, H. , Ladwig, D. , Lee, T. , & Dutton, R.

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